卢星

副教授

lux86@mail.sysu.edu.cn

最热门的网赌网址大全"百人计划"引进人才，博士生导师

教育经历

2010.09 – 2014.11       香港科技大学       电子及计算机工程学系       博士

2006.09 – 2010.06       复旦大学              微电子学系                      学士

授课课程 

本科生课程：《微纳电子器件》、《微加工工艺实验》、《工程设计与实践》

研究生课程：《半导体特性表征方法与技术》

研究方向 

微纳电子器件和集成芯片、MEMS和光电集成芯片、宽禁带半导体等

科研项目

  • 国家自然科学基金面上项目
  • 广东省自然科学基金面上项目
  • 广东省前沿与关键技术创新专项资金粤港合作专题项目

代表性科研成果

  • D. Zeng, S. Zhu, T. Luo, W. Chen, Z. Chen, Y. Pei, G. Wang, X. Lu*, "Heteroepitaxial  ϵ-Ga2O3  MOSFETs on a 4-inch Sapphire Substrate with a Power Figure of Merit of 0.29  GW/cm2", Proceedings of the 2024​ 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 192-195, 2020.

  • X. Lu, Y. Deng, Y. Pei, Z. Chen, and G. Wang*, "Recent advances in NiO/Ga2O3 heterojunctions for power electronics", Journal of Semiconductors, 44(6), 061802, 2023.

  • Y. Tu, W. Chen, Z. Zhang, Z. Chen, Y. Pei, G. Wang and X. Lu*, "Surface Acoustic Wave Resonators Using a Novel ε-Ga2O3 Piezoelectric Film Grown on Sapphire", Electron Device Letters, IEEE, 44, 6, 895-898, 2023. (Editor's pick)

  • Y. Deng, Z. Yang, T. Xu, H. Jiang, K. W. Ng, C. Liao, D. Su, Y. Pei, Z. Chen, G. Wang and X. Lu*, "Band alignment and electrical properties of NiO/β-Ga2O3 heterojunctions with different β- Ga2O3 orientations", Applied Surface Science, 622, 156917, 2023. 

  • Z. Chen, X. Lu*, Y. Tu, W. Chen, Z. Zhang, S. Cheng, S. Chen, H. Luo, Z. He, Y. Pei and G. Wang*, "ε-Ga2O3: An Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators", Advanced Science, 2203927, 2022. 

  • C. Liao, X. Lu*, T. Xu, P. Fang, Y. Deng, H. Luo, Z. Wu, Z. Chen, J. Liang*, Y. Pei* and G. Wang, "Optimization of NiO/β-Ga2O3 Heterojunction Diodes for High-Power Application", Transactions on Electron Devices, IEEE, 69, 10, 5722-5727, 2022. 

  • W. Chen, H. Luo, Z. Chen, Y. Pei, G. Wang, X. Lu*, "First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping", Applied Surface Science, 630, 154440, 2022.

  • X. Lu, T. Xu, Y. Deng, C. Liao, H. Luo, Y. Pei, Z. Chen*, Y. Lv* and G. Wang, "Performance-enhanced NiO/β-Ga2O3 heterojunction diodes fabricated on an etched β-Ga2O3 surface", Applied Surface Science, 597, 153587, 2022.

  • H. Luo, X. Zhou, Z. Chen, Y. Pei, X. Lu* and G. Wang, "Fabrication and Characterization of High-Voltage NiO/β-Ga2O3 Heterojunction Power Diodes", Transactions on Electron Devices, IEEE, 68, 8, 3991-3996, 2021.

  • S. Wang, R. Chen, Y. Ren, Y. Hu, Z. Yang, C. Zhou, Y. Lv*, and X. Lu*, "Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector", Photonics Technology Letters, IEEE, 33, 4, 213-216, 2021.

  • L. Zhou*, L. Chen, J. Ruan, X. Lu*, B. Liu, R. Gao, Y. Li, L. Geng, and X. Ouyang, "Pulsed x-ray detector based on Fe doped β-Ga2O3 single crystal", Journal of Physics D: Applied Physics, 54, 274001, 2021. 

  • J. Chen, H. Luo, H. Qu, M. Zhu, H. Guo, B. Chen, Y. Lv, X. Lu*, and X. Zou*, "Single-trap Emission Kinetics of Vertical β-Ga2O3 Schottky Diodes by Deep-level Transient Spectroscopy", Semiconductor Science and Technology, 36, 055015, 2021. 

  • Y. Hu, S. Wang, Z. Yang, R. Chen, X. Lu*, Y. Ren, X. Zhou, Z. Chen, Y. Pei, and G. Wang, "1.2 kV/2.9 mΩ·cm2 Vertical NiO/β-Ga2O3 Heterojunction Diodes with High Switching Performance", Proceedings of the 2020​ 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 178-181, 2020.

  • H. Luo, H. Jiang, Z. Chen, Y. Pei, Q. Feng, H. Zhou, X. Lu*, K. M. Lau, and G. Wang, "Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment", Electron Device Letters, IEEE, 41, 9, 1312-1315, 2020.

  • X. Lu, X. Zhou, H. Jiang, K. W. Ng, Z. Chen, Y. Pei, K. M. Lau, and G. Wang, "1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below 1 µA/cm2", Electron Device Letters, IEEE, 41, 3, 449-452, 2020.

  • Y. Wang, Y. Gu, X. Lu*, H. Jiang, H. Guo, B. Chen, K. M. Lau, And X. Zou*, "Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K", Journal of the Electron Devices Society, IEEE, 8, 850-856, 2020.

  • J. Chen, M. Zhu, X. Lu*, and X. Zou*, "Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures", Applied Physics Letters, 116, 062102, 2020.

  • X. Lu, X. Zhang, H. Jiang, X. Zou, K. M. Lau, and G. Wang, "Vertical β-Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance", Physica Status Solidi A, 1900497, 2019.

  • Y. Ren, L. Zhou, K. Zhang, L. Chen, X. Ouyang, Z. Chen, B. Zhang, and X. Lu*, "Study of 14.9 MeV Neutron Irradiation Effects on Ni/GaN Schottky Contacts Using Low-Frequency Noise Spectroscopy", Physica Status Solidi A, 1900701, 2019.

  • L. Zhou, X. Lu*, J. Wu, H. Jiang, L. Chen, X. Ouyang and K. M. Lau, "Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes", Electron Device Letters, IEEE, 40, 7, 1044-1047, 2019.

  • X. Lu, S. Yang, H. Jiang, J. Wu, "Monolithic integration of GaN LEDs with vertical driving MOSFETs by selective area growth and band engineering of the p-AlGaN electron blocking layer through TCAD simulation", Semiconductor Science and Technology, 34, 064002, 2019.

  • L. Zhou, X. Lu*, L. Chen, X. Ouyang, B. Liu, J. Xu and H. Tang, "Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on (-201) β-Ga2O3 Grown by Edge-Defined Film-Fed Growth", ECS Journal of Solid State Science and Technology, 8, Q3054-Q3057, 2019.

  • X. Lu, L. Zhou, L. Chen, X. Ouyang, H. Tang, B. Liu and J. Xu, "X-ray Detection Performance of Vertical Schottky Photodiodes Based on a Bulk β-Ga2O3 Substrate Grown by an EFG Method", ECS Journal of Solid State Science and Technology, 8, Q3046-Q3049, 2019.

  • X. Lu, L. Zhou, L. Chen, X. Ouyang, B. Liu, J. Xu, and H. Tang, "Schottky x-ray detectors based on a bulk β-Ga2O3 substrate", Applied Physics Letters, 112, 103502, 2018.

  • X. Lu, C. Liu, H. Jiang, X. Zou, and K. M. Lau, "High performance monolithically integrated GaN driving VMOSFET on LED", Electron Device Letters, IEEE, 38, 6, 752-755, 2017. (Featured in SemiconductorToday)

  • X. Lu, K. Yu, H. Jiang, A. Zhang, and K. M. Lau, "Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric", Transactions on Electron Devices, IEEE, 64, 3, 2017.

  • X. Lu, C. Liu, H. Jiang, X. Zou, A. Zhang and K. M. Lau, "Monolithic integration of enhancement-mode Vertical driving transistors on InGaN/GaN light emitting diodes", Applied Physics Letters, 109, 053504, 2016.

  • X. Lu, H. Jiang, C. Liu, X. Zou and K. M. Lau, "Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing", Semiconductor Science and Technology, 31, 055019, 2016.

  • X. Lu, C. Liu, H. Jiang, X. Zou, A. Zhang and K. M. Lau, "Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on Bulk GaN substrate", Applied Physics Express, 9, 031001, 2016.

  • X. Lu, J. Ma, H. Jiang, C. Liu, P. Xu and K. M. Lau*, "Fabrication and characterization of gate-last self-aligned AlN/GaN MISHEMTs with in-situ SiNx gate dielectric", Transactions on Electron Devices, IEEE, 62, 6, 1862, 2015.

  • X. Lu, J. Ma, H. Jiang and K. M. Lau*, "Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition", Applied Physics Letters, 105, 102911, 2014.

  • X. Lu, J. Ma, Z. Liu, H. Jiang, T. Huang, and K. M. Lau*, "In-situ SiNx gate insulator by MOCVD for low- leakage-current ultra-thin-barrier AlN/GaN MISHMETs on Si", Physica Status Solidi A, 211, 4, 775-778, 2014.

  • X. Lu, J. Ma, H. Jiang, and K. M. Lau*, "Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition", Applied Physics Letters, 104, 032903, 2014.

  • X. Lu, J. Ma, C. P. Yue, and K. M. Lau*, "A GaN-based Lamb-wave oscillator on silicon for high-temperature integrated sensors", Microwave and Wireless Components Letters, IEEE, 99, 6, 318, 2013.

  • X. Lu, C. M. Lee, S. Y. Wu, H. P. Ho and K. M. Lau*, "GaN-based S0-wave sensors on silicon for chemical and biological sensing in liquid environments", Sensors Journal, IEEE, 13, 4, 1245, 2013.